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High Purity Gallium Nitride GaN powder CAS 25617-97-4, 99.99%

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Gallium Nitride, or GaN, is a mechanically and heat-resistant semiconductor compound. In its pure form, it has a band-gap of 3.4 eV. Purity: 99.99%

Gallium Nitride GaN:
Gan Gallium Nitride This is a semiconductor compound that is mechanically hard and has high thermal conductivity. In its pure form, it has a band-gap of 3.4eV.

Gallium Nitride:
CAS Number CAS 2561797-4
Purity >=99.99%
CAS number 25617-97-4
Appearance Yellow Powder
X ray Diffraction Conforms to Structure
Trance Metal Analysis 200 ppm

This material is suitable for satellite solar cells arrays due to its low sensitivity (with another III-nitride group). This equipment can also be used for military or space applications because it is resistant to radiation.

Since the Gallium nitride transistor As they are able to operate at a temperature higher and at a voltage higher than an arsenide (GaAs), they make a perfect power amplifier for microwave frequencies. GAN can also be used to provide a feature that is hoped for in THz devices. GaN has been revealed to be a candidate for 5G cell base stations due to its high voltage breakdown and power density.

GaN materials research and applications are at the forefront of semiconductor research. It is a new material for developing semiconductor devices, optical electronics and other semiconductor materials, such as SiC or diamonds. These are also known as first-generation GE, Si-A third-generation semiconductor after semiconductor material, GaAs second-generation, InP composite semiconductor material. It has a large direct bandgap and a strong atomic connection, as well as high thermal conductivity (almost no sour corrosive corrosion) and high chemical stability.

Send an inquiry for the latest news gallium nitride price You can also contact us if you have any questions. Gallium Nitride powder Bulk discounts are available.

Gallium Nitride Product Performance
GaN powder is a versatile material with a large direct bandgap. It also has strong atomic bonds and excellent chemical stability.

Technical Parameters of Gallium Nitride GaN:
Product Name MF Purity Particle Size Melting Point Density Color
gallium nitride GaN 99.99% -60 mesh 1700 6.1g/mL,25/4 light yellow

Chemical Composition and Properties of Gallium Nitride GaN:
GaN This is a great way to get started. You can also find us on Twitter @Ni Zn Al Na The following are some of the ways to get in touch with us Ca
99.99% 0.0005% 0.0003% 0.0005% 0.001% 0.0005% 0.0003% 0.0005% 0.005%

How do you pronounce Gallium Nitride GaN Powder produced?
Group III-V gallium nitride Gan semiconductor The compound has a high resistance to corrosion. It is because of the bond formed between Ga and Nitrogen that the compound is corrosion resistant. Ballium Nitride is a direct bandgap (bandgap=3.4 with fibrous mineral structure) semiconductor and is used for the production of corrosive light emitting devices. Gallium Nitride is made by reacting Ga2O3 and NH3 together at high temperatures of around 1000 deg C.
Ga 2 O 3 + 2 NH 3 - 2 GaN + 3H 2 O
A compound organometallic containing Ga with a nitrogen atom may also be formed by the chemical phase. GaN is unaffected by acidic and alkaline environments.

Applications Gallium Nitride GaN Powder :
Since 1990 GaN has become a common light-emitting device (LED). Gallium nitride emits blue light which indicates it is a semiconductor with a direct III/V bandgap. Gallium Nitride Semiconductor This is a great choice for high-power transistors, which can operate at high temperatures. Blu-ray disk reading. It is also used for lasers and photonics. In the near future, sensor technology will use gallium nitride.
1. GaN is also used in smaller, full-color panels for trains and buses. GaN-based leds are more efficient, and offer another option for blue and Green LEDs.
2. The use of gallium nitride in semiconductors is widespread, including electric vehicles and photovoltaics.
3. The 5G radiofrequency uses gallium nitride. Gallium nitride will gradually replace the silicon-based materials in the 5G field due to the increased demands for radio frequency energy and power consumption.
4. GaN can be used for fast charging mobile phones. Gallium nitride charger It is a good idea to use Gan technology Its high-efficiency, compact size, and large power are key characteristics to the development of super-fast charger technology.

Gallium Nitride GaN powder - Packing & Shipping
The packaging we use depends on the amount of gadolinium nitride (GaN) powder.
Powder packaging of gallium nitride, GaN: Vacuum packaging 100g,500g or 1kg/bag. 25kg/barrel.
Shipment of GaN powder, also known as gallium nitride: As soon as payment is received, you can ship your order by air or sea.

Technology Co. Ltd., () is an established global chemical material manufacturer and supplier with over 12 years' experience in the production of high-quality nanomaterials. These include boride powders, nitride particles, graphite particles, sulfide particles, 3D-printing powders, etc.
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Gallium Nitride Properties

Alternative Names gallium nitride powder, GaN, GaN powder, gallium mononitride
CAS Number 25617-97-4
Compound Formula GaN
Molecular Mass 83.73
Appearance Light Yellow Powder
Melting Point 1700 degC
Boiling Point N/A
Density 6.1 g/cm3
Solubility In H2O N/A
Exact Volume 82.9287
Monoisotopic Mash 82.9287

Aluminum Nitride Health & Safety Information

Sign Word Warning
Hazard Statements H317
Hazard Codes N/A
Risk Codes N/A
Safety Declarations 22-24/25
RTECS Number LW9640000
Transport Information N/A
WGK Germany 3

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