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GaN is a semiconductor material of third-generation with a large forbidden-band width. It has superior properties compared to first-generation Si, and second-generation GaAs.
GaN devices, due to their high thermal conductivity and large band gaps, can operate at temperatures over 200 degC. This allows them to carry a higher energy density, and improve reliability. A larger forbidden band and dielectric break-down electric field can reduce the on resistance of the device. This is good for improving the overall efficiency of the product.

GaN semiconductors can therefore be designed to have a higher bandwidth, a higher amplifier gain and efficiencies, as well as smaller dimensions, all in keeping with the "tonality" that is characteristic of the semiconductor industry.

The base station power amplifier also uses GaN. Gallium nitride, gallium arsenide and indium-phosphide are common semiconductor materials used in radio frequency applications.

GaN devices have better frequency characteristics than other high-frequency technologies such as indium phosphide and gallium arsenide. GaN devices must have a higher instantaneous bandwith. This can be achieved by using carrier aggregation, preparing higher frequency carriers and using carrier aggregation.

GaN can achieve higher power density than silicon. GaN has a higher energy density. GaN's small size is an advantage when it comes to achieving a particular power level. Smaller devices can reduce device capacitance, making it easier to design higher bandwidth systems. Power Amplifiers (PA) are a critical component of the RF Circuit.

Currently, power amplifiers are primarily composed of a galium arsenide (GaAs) power amplifier, and a complementary metallic oxide semiconductor power amplifier (CMOSPA), of which GaAs is the mainstay. But with 5G coming, GaAs devices won't be able maintain high integration in such high frequencies.

GaN will be the next hot topic. GaN, as a wide-bandgap semiconductor, can withstand greater operating voltages. This results in higher power density. It also means higher operating temperatures.

Qualcomm President Cristiano Amon said at the Qualcomm 5G/4G Summit that the first 5G smartphones will debut during the first half and end of 2019 (Christmas and New Year). According to reports 5G technology should be up to 100 times more efficient than current 4G networks. This will allow users to reach Gigabit-per-second speeds while reducing the latency.

As well as the increase in RF devices needed for base station RF transmitter units, both the number and density of the base stations will be greatly increased. As a result, in comparison with the 3G/4G eras, 5G devices will have dozens or even hundreds of times the number of RF transceiver units. Therefore, cost control and silicon-based GaN technology has a large cost advantage. It is possible to achieve a market breakthrough using silicon-based GaN technologies.

Commercialization of any new semiconductor technology is difficult, and this can be seen in the evolution of the last two generations. GaN, which is also in this stage at the moment, will cost more to the civilians because of the increased demand for silicon-based devices, the mass production and process innovations, etc.

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