High Purity Titanium Silicide Ti5Si3 Powder CAS 12067-57-1, 99%

About Titanium Silicide Ti5Si3 Muffer :
Ti5Si3 It is stable at high temperatures and strong. Here's how to sinter: Heat Si powder and Ti powder until they are between 1350 and 1450 degrees Celsius. Heat preservation The furnace should be at room temperature. After that, the sintered material can then be mixed with anhydrousethanol. After cooling to room temperature, then the container is sealed with AR gas. Next, add AR gas to fill the container. Finally, feed the sealed container into high energy planetary mill. The ball milling mixture can also be used for wet mill refinement. The slurry could be dried, then ground in a vacuum. Ti5Si3 powder The 130-mesh sieve was used to achieve this.

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Performance of the Titanium Silicide Ti5Si3 pulver product:
Titanium Silicide Ti5Si3, also known as Titanium Silicide has many outstanding characteristics. The titanium silicate, Ti5Si3, is extremely hardy and has high melting points (22403 K), low densities (3.3% g/cm3) high resistance (50-120mO*cm), toughness (968 V), excellent resistance to high-temperature oxygenation and good heat strength.

Technical Parameters of Titanium Silicide powder Ti5Si3

Product name	MF	Purity	Dimensions of the particle	Molecular weight	Density	The sky's color
Titanium Silicide	Ti5Si3	99%	5-10um	323.59	4.39 g/cm3	black

Ti5Si3 titanium silicicide powder: Chemical composition

Ti5Si3	Ti	Si	P	S	Si	Mg	Fe
99%	73.6%	26.1%	0.012%	0.07%	0.006%	0.001%	0.12%

It's simple. Titanium Silicide Ti5Si3 Muffer Produced?
You can prepare Ti5Si3 in many different ways. You can use a powder sintering or casting process to prepare Ti5Si3. Because of the complex technology involved and their low yield, however, these methods can lead to polluting.
1. The invention concerns a technique for making trisilicate Pentatitanium-intermetallic compound paste from a batch. The following are steps in the process.
(1) Ti5Si3 was created by vacuum-sintering. It's made with a combination of Si powders and Ti powders, at a ratio 3:5.
2) Step 1: Mix evenly the Si powder and the T powder in a vacuum oven. Next, heat the oven at 1350-1450. At room temperature, cool the furnace.
(3) Once the sintered material had been prepared, anhydrousethanol and water were added. They were placed in a sealed container. This sealed tank was put in an AR gas protected high-energy planet mill, and then refined by the wet ballmill.
Step 3: The ball milling slurry of the third step was vacuum dried. It was then ground into Ti5Si3 by using a 130-mesh sieve.
2. This batch preparation process is for trisilicate-intermetallic powder. Claim 1 describes the batch preparation method as having this characteristic: In step (2) of vacuum furnace, vacuum must not exceed 1.0x10-2Pa
3. This batch method is for preparation of trisilicate Intermetallic Compounds Powder. As claimed in Claim 1, the following characteristics apply: At 1350-1450, the temperature is reached at 20/min. This is kept for between 3-5 heures.
4. In claim 1, it is stated that batch preparation methods of trisilicate-intermetallic compound powder are described. Step (3) describes the rotation speed of a planetary ballmill at 300-500 RPM. Ball grinding can take 24-48 hours.
This batch process is used for preparation of penta-titanium trisilicate Penta intermetallic compound powders. It follows the following molar ratios: 3:5 and Si powders are the raw materials. After heat preservation at 1350-1450 degrees and cooling the mixture, it is transferred to a vacuum tank. As a protection gas, AR gas is added to the tank. The tank then goes into the high energy planetary ballmill. Refinement was done using the wet-mill method. A 130 mesh Ti5Si3 screen was created at the time. The process removes many of the defects such as melting casting or powder pressing, sintering, rapid solidification, self-spreading combustion, and other methods. These can be difficult to clean, cause high levels of pollution, and have very low yields. High purity, zero byproducts. It can also control the products' stoichiometric ratio.

Applicaciones Titanium Silicide Ti5Si3 Muffer :
For the manufacture of MOS, MOSFET and DRAM gates, Ti5Si3 titanium silicide can be used extensively. Ohmic contacts are used in source/drain interconnects.
How to Pack and Ship Titanium Silicide Ti5Si3 Pulver
There are many options for packing depending on how much Ti5Si3 titan silicide powder.
Packaging for Titanium Silicide Ti5Si3 Pulver: The following options are available: 100g vacuum packing, 500g vacuum packaging, 1kg/bag and 25kg/barrel. As you require.
Titanium Silicide Ti5Si3 Powder Shipping As soon as the payment receipt is received, you can ship by air or sea.


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